Result: Sensor concept

• 50*400 µm2 pixel size

• n on n pixel

• moderated p-spray isolation

• oxigenated silicon

• 3 sensor tiles per wafer

• various tests and process monitor structures

• radiation hardness ᡪMRad and 1x1015neq

Photo of Prototype 1 Wafer

• Further solutions to allow reasonable operating voltages even after high fluences and annealing:
  • low resistive silicon
  • thin detectors
  • > to reduce interstrip capacitance

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