Crystal Alteration
- alter defect kinetics by controlled introducing individual impurities in silicon crystal (oxigenation)
- radiation studies with 24GeV protons, 192MeV pions and reactor neutrons
- strong improvement for pions and protons
- no improvement for neutrons
- improvement due to point defects (caused by an introduction of donator like defects)
- reduction of stable damage
- reduction of amount of reverse annealing
- deceleration of reverse annealing