Radiation Damages in Sensor
Increase bulk generation current
- limited by low operation temperature and small pixel size
Increase acceptor like defects
- type conversion and increase of depletion voltage
- in case ATLAS bias voltage Vdep limited to 600V
- would be only partially depleted =>smaller signal
Increase of trapping centres
- charge loss => small compared to above
Creation of positive charges in the oxide and additional interface states
electron accumulation layer
- increase of interstrip capacitance
- pin-holes