TID: Dose Rate Effect, Example:NMOS

• low dose rate:

  • 2nd order effect: recombination. Each electron is surrounded by few holes
    • small recombination
    • high density of trapped holes in SiO2
  • 1st order effect: time. Long time irradiation => most of the trapped holes leave SiO2
  • Result: large shift in characteristics

• Low dose can reduce the failure dose of CMOS or BiCMOS circuit by a factor of 5 or more !!

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