SEE effects in Deep Submicron
Single event gate rupture
- occurs when a highly ion. particle causes an avalanche breakdown of the transistor gate.
- irreversible damage
- never observed in the 0.25 mm process
Single event latch up
- occurs when a parasitic thyristor is switched on by power supply spikes or ionising radiation
- reversible or irreversible
- never observed in deep submicron
Single event upset
- highly ion. particle deposits charge near a low capacitance node
- soft error
- IS a risk and should be protected with redundant architecture