TID: Surface Damages
Defects induced by space charge buildup
- speed of a circuit decreases due to the decrease of the conductivity
- dynamic current consumption rises; rise and fall time of signals increase
- threshold characteristics of transistors change and transistor might stop to switch
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Device degradation scale approx. with the total energy deposited by irradiation -> total ionising dose (TID)
TID may change the device electrical characteristics for a dose as low as 10Gy=1kRad!! (HERMES Si RD ~200kRad)
Damage is depending on dose, radiation duration, applied voltage, layout and size of device --> testing is essential