TID: Ionisation in Si or SiO2

• Direct mechanism:

  • incident photon => absorption
  • incident charged particle => ion. along track

• Indirect mechanism:

  • incident heavy particle =elastic collisions or nuclear reaction => ionisation along the track of secondary particles

• Ionisation:
  • electron-hole pair creation
  • partial recombination (strong if no electrical field)
  • electron: high mobility =>leave oxide
  • holes: very low mobility=>mostly trapped

• Result: net pos. charge trapped in oxide

• long term trapping at room temperature

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